View FS1610BH00TU_280662.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FS16...H
STANDARD SCR
TO220-AB
On-State Current 16 Amp Gate Trigger Current > 2 mA to < 40 mA Off-State Voltage 200 V / 600 V
These series of Silicon Controlled R ectifier use a high performance PNPN technology.
K A G
These parts are intended for general purpose high current applications where moderate gate insensitivity is required.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL PARAMETER On-state Current Average On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature CONDITIONS 180 Conduction Angle, Tc = 110 C Half Cycle, = 180 , TC = 110 C Half Cycle, 60 Hz Half Cycle, 50 Hz tp = 10ms, Half Cycle IGR = 10 A 20 s max. 20 s max. 20ms max. -40 -40 10s max. Min. Max. 16 10 200 190 180 5 4 10 1 +125 +150 260 Unit A A A A A 2s V A W W C C C
IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld
SYMBOL
PARAMETER Repetitive Peak Off State Voltage
CONDITIONS RGK = 1 K B 200
VOLTAGE D 400 M 600
Unit V
VDRM VRRM
Dec - 02
FS16...H
STANDARD SCR
Electrical Characteristics
SYMBOL PARAMETER Gate Trigger Current Off-State Leakage Current On-state Voltage Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise CONDITIONS MIN MAX MAX MAX MAX MAX MIN SENSITIVITY 10 2 25 2 5 1.6 1.3 0.2 40 60 500 50 1.1 60 0.77 23 50 90 1000 14 4 40 Unit mA mA A V V V mA mA V/s A/s C/W C/W V m
IGT IDRM / IRRM VTM VGT VGD IH IL dv / dt di / dt Rth(j-c) Rth(j-a)
VD = 12 VDC , RL = 33. Tj = 25 C VD = VDRM , RGK = 220 Tj = 125 C VR = VRRM , Tj = 25 C at IT = 32 Amp, tp = 380 s, Tj = 25 C VD = 12 VDC , RL = 33, Tj = 25 C VD = VDRM , RL = 3.3K Tj = 125 C
MAX IT = 500 mA , Gate open, Tj = 25 C IG = 1.2 IGT MAX VD = 0.67 x VDRM , Gate open Tj = 125 C MIN Tr 100 ns, F = 60 Hz, Tj = 125 C MIN
Critical Rate of Current Rise IG = 2 x IGT Thermal Resistance Junction-Case for DC Thermal Resistance Junction-Amb Threshold Voltage Dynamic resistance Tj = 125 C Tj = 125 C
Vt0 Rd
MAX MAX
PART NUMBER INFORMATION F
FAGOR SCR CURRENT
S
16
10
B
H
00
TU
PACKAGING FORMING CASE VOLTAGE
SENSITIVITY
Dec - 02
FS16...H
STANDARD SCR
Fig. 1: Maximum average power dissipation versus average on-state current. P (W) 16 18 14 12 10 8 6 4 2 0 IT(av)(A) 0 1 2 3 4 5 6 7 8 9 10 16 14 12 10 8 6 4 2 0 0 Tc (C) 25 50 75 100 125 Fig. 2: Average and D.C. on-state current versus case temperature. IT(av)(A)
Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. K = [Zth(j-c) / Rth (j-c)] 1.0
Fig. 4: Relative variation of gate trigger current , holding current and latching current versus junction temperature. IGT, IH, IL (Tj) / IGR, IH, IL (Tj = 25 C) 2.5
2.0 0.5 1.5
IGT
IH & IL
1.0 0.2 0.5 tp (s) 1E-2 1E-1 1E+0 Tj (C) -40 -20 0 20 40 60 80 100 120 140
0.1 1E-3
0.0
Fig. 5: Surge peak on-state current versus number of cycles. I TSM (A) 200
Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp < 10 ms, and corresponding value of I2t. ITSM(A). I2t (A2s)
Tj initial = 25 C
150 1000 100 100 50
I2 t ITSM
0 1 10 100 1000
Number of cycles
10 1 10
tp(ms)
Dec - 02
FS16...H
STANDARD SCR
Fig. 8: On-state characteristics (maximum values).
ITM(A) 1000
100
Tj = Tj max.
Tj max Vto = 0.77 V Rt = 23 m
10
Tj = 25 C
1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VTM(V)
PACKAGE MECHANICAL DATA
TO-220AB DIMENSIONS Milimeters Nominal 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 15.80 2.65 1.14 1.14 14.00 10.40 0.88 1.32 4.60 0.70 2.72 2.70 6.60 3.85 16.80 2.95 1.70 1.70
B
c b2
REF. A a1 a2 B b1 b2 C c1 c2 e F I I4 L I2 I3 M Min. 15.20
Max. 15.90
L
F
oI A
14
a1
13
c2
12 a2
16.40
b1 e
M c1
2.60
Dec - 02

▲Up To Search▲

Price & Availability of FS1610BH00TU

	To Download FS1610BH00TU Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .